In the literature there exist two models for topological insulator (TI). Model I assumes TI as a nonreciprocal biisotropic material whereas model II accommodates conducting states in the boundary condition. In this paper using an existing mathematical formulation accommodating both models, Fresnel equations and Goos Hänchen shift at the interface of NID dielectric-TI are investigated. Furthermore, impact of NID and/or TI on the GHS of the reflected waves have also been studied and compared with the existing cases.

中文翻译：

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NID介电体和拓扑绝缘体的平面界面处的Goos-Hänchen位移

在文献中，存在两种用于拓扑绝缘体（TI）的模型。模型I假设TI是不可逆的双向同性材料，而模型II则考虑了边界条件下的导电状态。在本文中，使用一种既能容纳这两种模型的现有数学公式，又能研究NID电介质-TI界面处的菲涅耳方程和GoosHänchen位移。此外，还研究了NID和/或TI对反射波GHS的影响并将其与现有情况进行比较。