Abstract L10-MnGa alloy films have attracted much attention for application of spin-transfer torque magnetic random access memories. Here we present the first report of the structure, magnetic and electrical transport properties of L10-MnGa films doped with Pt. It is found that L10-MnGa films have (0 0 1) orientation for 5% Pt-doped, and show (1 1 0) orientation for 10% and above Pt-doped. The out-of-plane coercivities increase, both the saturation magnetization and the magnetic anisotropy decrease monotonously with increasing Pt composition. By increasing Pt composition, L10-MnGa films change from ferromagnetic to paramagnetic property. The results of Hall effect measurement also confirm the change in magnetism. The experimental results are meaningful to open up new ideas for the design and application of spintronics devices.

中文翻译：

---

通过 Pt 掺杂调节 L10-MnGa 薄膜的磁性

摘要 L10-MnGa合金薄膜在自旋转移矩磁性随机存取存储器的应用中备受关注。在这里，我们首次报告了掺杂 Pt 的 L10-MnGa 薄膜的结构、磁和电传输特性。发现L10-MnGa薄膜在5% Pt掺杂时具有(0 0 1)取向，在10%及以上Pt掺杂时显示(1 1 0)取向。面外矫顽力增加，饱和磁化强度和磁各向异性都随着 Pt 成分的增加而单调减少。通过增加 Pt 成分，L10-MnGa 薄膜从铁磁性变为顺磁性。霍尔效应测量的结果也证实了磁性的变化。实验结果对于为自旋电子器件的设计和应用开辟新思路具有重要意义。