The spin coating method was employed to fabricate Yb-doped ZnO thin films at 0, 3, 5, 7, and 9 at.% over a glass substrate at low temperature. X-ray diffraction analysis revealed that the hexagonal wurtzite structure was retained even at high doping contents. With the incorporation of Yb⁺³ ions, a slight decrease in the lattice parameters and crystallite size was observed as the ytterbium content increased. X-ray photoelectron spectroscopy confirmed the presence of ytterbium in the doped ZnO films, and the oxidation state of ytterbium was 3+ for all the samples. Morphological studies revealed a surface microstructure formed by micro islands, which tended to be denser as the ytterbium content increased. Optical transmittance was observed at approximately 75–85%, a blueshift was observed, and consequently, an increase in the bandgap, which varies from 3.0 to 3.2 eV, was observed. The refractive index and extinction coefficient decreased as the ytterbium dopant concentration increased. The photoluminescence results exhibited a strong ultraviolet emission, allowing the use of these thin films in optoelectronic applications.

在低温下，采用旋涂法在玻璃基板上以0、3、5、7和9 at。％的比例制备Yb掺杂的ZnO薄膜。X射线衍射分析表明，即使在高掺杂含量下，六方纤锌矿结构仍被保留。随着Yb ^+3的加入离子，随着as含量的增加，晶格参数和微晶尺寸略有下降。X射线光电子能谱证实掺杂的ZnO薄膜中存在presence，并且所有样品的the的氧化态均为3+。形态学研究表明，由微岛形成的表面微观结构随着as含量的增加而趋于致密。观察到大约75-85％的光透射率，观察到蓝移，因此，观察到带隙增加，从3.0到3.2 eV不等。折射率和消光系数随as掺杂剂浓度的增加而降低。光致发光结果显示出强紫外线发射，从而允许在光电应用中使用这些薄膜。