We have developed a unique sputter deposition technique for a pure-perovskite (001)/(100)-oriented samarium-doped Pb(Mg _1/3 , Nb _2/3 )O ₃ –PbTiO ₃ (Sm-PMN-PT) epitaxial thin film on Si as a future piezoelectric transducer thin film in microelectromechanical systems (MEMSs). This technique bases on the use of a “Pb(Zr,Ti)O ₃ (PZT)-based seed layer” and “separate sputter deposition.” Undesired orientations and phases of such a relaxor-based ferroelectric are usually generated during the sputter deposition. This technique was demonstrated to provide preferential (001)/(100) orientation and pure-perovskite phase to the monocrystalline thin film. The fabricated film had excellent homogeneousness of the content distribution. Considering a practical thickness, a 2- $\mu \text{m}$ -thick monocrystalline thin film was grown on an Si substrate with this technique. Then, the piezoelectricity $\vert {e}_{{31},{f}}\vert $ of the Sm-PMN-PT/PZT stacked film was evaluated through an actuation test of the unimorph cantilever. As a result, it measured 16–17 C/m ² , which is almost comparable with intrinsic PZT polycrystalline thin films with high $\vert {e}_{{31},{f}}\vert $ values. Considering that the actuation voltage was divided into Sm-PMN-PT and PZT layers, the inherent piezoelectricity of the Sm-PMN-PT thin film is expected to be higher. Optimization of the phase in the film by tuning the composition ratio also will further improve the piezoelectricity. We believe that this achievement is a great step to discover a giant piezoelectricity relaxor-based thin film beyond PZT for MEMS.

中文翻译：

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Si上纯钙钛矿（001）/（100）掺杂Sm掺杂Pb（Mg _1/3，Nb _2/3）O ₃ -PbTiO ₃的溅射外延技术的发展

我们已经开发了一种独特的溅射沉积技术，用于纯钙钛矿（001）/（100）取向 sa掺杂Pb（Mg _1/3 ，Nb _2/3 ）O ₃ -PbTiO ₃（Sm-PMN-PT）外延Si上的薄膜作为微机电系统（MEMS）中未来的压电换能器薄膜。该技术基于使用“ Pb（Zr，Ti）O ₃（PZT）型种子层”和“单独的溅射沉积”。这种基于弛豫的铁电体的不期望的取向和相位通常在溅射沉积期间产生。已证明该技术可为单晶薄膜提供优先的（001）/（100）取向和纯钙钛矿相。制得的膜具有优异的含量分布均匀性。考虑到实际厚度，2- $ \ mu \ text {m} $ 用这种技术在Si衬底上生长了厚的单晶薄膜。然后，压电性 $ \ vert {e} _ {{31}，{f}} \ vert $ Sm-PMN-PT / PZT叠层膜的膜厚通过单晶悬臂的驱动测试进行评估。结果，它的测量 值为16–17 C / m ²，几乎可以与具有高强度的本征PZT多晶薄膜相媲美。 $ \ vert {e} _ {{31}，{f}} \ vert $ 价值观。考虑到将驱动电压分为Sm-PMN-PT和PZT层，Sm-PMN-PT薄膜的固有压电性有望更高。通过调节组成比来优化膜中的相也将进一步改善压电性。我们相信，这项成就是发现MEMS超越PZT的巨大压电松弛器薄膜的重要一步。