The thermal sensitivity and Low Frequency Noise (LFN) of compensation doped Silicon-On-Insulator (SOI) resistors are studied experimentally, down to the cryogenic regime. A high compensation nominal ratio ${K}={N}_{A}/{N}_{D}$ of 0.82 is compared with uncompensated and partially compensated configurations, using Phosphorus and Boron as dopant species. The Temperature Coefficient of Resistance (TCR) reaches −2.7%/K at 80 K, for an effective compensation ratio close to 0.98 considering incomplete dopant ionization. The measurements reveal a low LFN with a nearly frequency-independent spectrum, far from the classical 1/f trend observed in uncompensated silicon. The mean value of the Hooge constant on the highly compensated silicon sample equals $3.15\times 10 ^{-4}$ at 300 K and $4.50\times 10^{-5}$ at 80 K. The normalized LFN at 80 K does not depend on the resistor length and thereby seems independent of the volume. Such high performance thermistors represent an attractive, mature and affordable solution for high performance thermal sensing.

中文翻译：

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低温高补偿硅热敏电阻中的 1/f 降噪

通过实验研究了补偿掺杂绝缘体上硅 (SOI) 电阻器的热灵敏度和低频噪声 (LFN)，直至低温状态。高补偿名义比率 ${K}={N}_{A}/{N}_{D}$ 0.82 与未补偿和部分补偿的配置相比，使用磷和硼作为掺杂物质。电阻温度系数 (TCR) 在 80 K 时达到 -2.7%/K，考虑到掺杂剂电离不完全，有效补偿比接近 0.98。测量结果显示具有几乎与频率无关的频谱的低 LFN，远离经典1楼在未补偿的硅中观察到的趋势。高度补偿的硅样品上 Hooge 常数的平均值等于 $3.15\times 10 ^{-4}$ 在 300 K 和 $4.50\times 10^{-5}$ 在 80 K 处。80 K 处的归一化 LFN 不取决于电阻器长度，因此似乎与体积无关。这种高性能热敏电阻代表了一种有吸引力、成熟且价格合理的高性能热传感解决方案。