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Impacts of Electrical Field in Tunneling Layer on Operation Characteristics of Poly-Ge Charge-Trapping Flash Memory Device
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-12-01 , DOI: 10.1109/led.2020.3032973 Hsin-Kai Fang , Kuei-Shu Chang-Liao , Kuan-Chi Chou , Tzu-Cheng Chao , Jung-En Tsai , Yan-Lin Li , Wen-Hsien Huang , Chang-Hong Shen , Jia-Min Shieh
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-12-01 , DOI: 10.1109/led.2020.3032973 Hsin-Kai Fang , Kuei-Shu Chang-Liao , Kuan-Chi Chou , Tzu-Cheng Chao , Jung-En Tsai , Yan-Lin Li , Wen-Hsien Huang , Chang-Hong Shen , Jia-Min Shieh
Operation characteristics of polycrystalline germanium (poly-Ge) tri-gate junctionless (JL) charge-trapping (CT) flash memory devices with stacked tunneling layer were studied in this work. The programming speeds of poly-Ge tri-gate JL flash device with GeOx/Al2O3/SiO2 tunneling layer are faster than those with GeOx/Al2O3 or GeOx/SiO2 ones, thanks to the modified electric field in the tunneling layer. Better retention characteristics are also achieved due to a larger barrier height and physical thickness, because Ge diffusion is effectively suppressed by adding an Al2O3 between GeOx and SiO2, which can improve the quality of tunneling layer. A poly-Ge CT flash device fabricated with low-temperature process is promising for embedded memory in Ge CMOS or 3D IC.
中文翻译:
隧道层电场对多晶锗电荷俘获闪存器件工作特性的影响
在这项工作中研究了具有堆叠隧道层的多晶锗 (poly-Ge) 三栅极无结 (JL) 电荷俘获 (CT) 闪存器件的操作特性。具有GeO x /Al 2 O 3 /SiO 2隧穿层的多Ge三栅JL闪存器件的编程速度比具有GeO x /Al 2 O 3或GeO x /SiO 2的器件更快,这要归功于改进的隧穿层中的电场。由于更大的势垒高度和物理厚度,也实现了更好的保留特性,因为通过添加 Al 2 O有效地抑制了 Ge 扩散3在GeO x和SiO 2 之间,可以提高隧道层的质量。低温工艺制造的多锗 CT 闪存器件有望用于 Ge CMOS 或 3D IC 中的嵌入式存储器。
更新日期:2020-12-01
中文翻译:
隧道层电场对多晶锗电荷俘获闪存器件工作特性的影响
在这项工作中研究了具有堆叠隧道层的多晶锗 (poly-Ge) 三栅极无结 (JL) 电荷俘获 (CT) 闪存器件的操作特性。具有GeO x /Al 2 O 3 /SiO 2隧穿层的多Ge三栅JL闪存器件的编程速度比具有GeO x /Al 2 O 3或GeO x /SiO 2的器件更快,这要归功于改进的隧穿层中的电场。由于更大的势垒高度和物理厚度,也实现了更好的保留特性,因为通过添加 Al 2 O有效地抑制了 Ge 扩散3在GeO x和SiO 2 之间,可以提高隧道层的质量。低温工艺制造的多锗 CT 闪存器件有望用于 Ge CMOS 或 3D IC 中的嵌入式存储器。