Time statistics for successive breakdown (BD) events in Al₂O₃/HfO₂-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the experimental data from the standard Weibull model attributed to the initial leakage current dispersion. An equivalent electrical circuit model is used to represent the stepwise current increase triggered by the appearance of multiple BD sites. Correlation effects in the order statistics are ascribed to a reduction of the effective stress voltage caused by the presence of a series resistance. It is shown that the ${E}$ -model acceleration law for dielectric BD is consistent with the data obtained from our antifuse cells.

中文翻译：

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聚类模型在多级反熔丝存储单元中与时间相关的氧化物击穿事件中的应用

研究了基于Al ₂ O ₃ /HfO ₂的纳米层压材料中连续击穿 (BD) 事件的时间统计数据，旨在开发多级一次性可编程 (OTP) 存储单元。聚类模型表明实验数据与标准威布尔模型的偏差归因于初始漏电流分散。等效电路模型用于表示由多个 BD 位点的出现触发的逐步电流增加。顺序统计中的相关效应归因于由串联电阻的存在引起的有效应力电压的降低。结果表明， ${E}$ - 介质 BD 的模型加速定律与从我们的反熔丝单元获得的数据一致。