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Ferroelectric Switching in Sub-20 nm Aluminum Scandium Nitride Thin Films
IEEE Electron Device Letters ( IF 4.9 ) Pub Date : 2020-12-01 , DOI: 10.1109/led.2020.3034576
Dixiong Wang , Jeffrey Zheng , Pariasadat Musavigharavi , Wanlin Zhu , Alexandre C. Foucher , Susan E. Trolier-McKinstry , Eric A. Stach , Roy H. Olsson

Ferroelectric switching was studied in 20 nm thick Al0.68Sc0.32N and Al0.64Sc0.36N films (with ~4 nm surface oxides) on platinized silicon wafers by multiple electrical characterization methods. Positive up negative down (PUND) measurements were conducted using 100 $\mu \text{s}$ monopolar triangular waveform excitation. At room temperature, Al0.68Sc0.32N exhibited an apparent remanent polarization, $\text{P}_{\text {r}} = {140}\,\,\mu \text{C}$ /cm2 and a coercive field, $\text{E}_{\text {c}} = {6.5}$ MV/cm, while film leakage prevented quantitative measurement of the Al0.64Sc0.36N ferroelectric properties. Remanent polarizations of $75~\mu \text{C}$ /cm2 for Al0.68Sc0.32N and $25\mu \text{C}$ /cm2for Al0.64Sc0.36N were measured at 120 K. Partial ferroelectric switching was confirmed at room temperature for both materials via the measured transverse piezoelectric coefficients (e31, f) of −1.3 C/m2 (down-switching) and −0.3 C/m2 (up-switching) for Al0.68Sc0.32N, and −0.9 C/m2 (down-switching) and −0.7 C/m2 (up-switching) for Al0.64Sc0.36N.

中文翻译:

亚 20 nm 铝氮化钪薄膜中的铁电开关

通过多种电学表征方法研究了镀铂硅晶片上20 nm 厚的 Al 0.68 Sc 0.32 N 和 Al 0.64 Sc 0.36 N 膜(具有~4 nm 表面氧化物)中的铁电开关。正上负下 (PUND) 测量使用 100 $\mu \text{s}$ 单极三角波激励。在室温下,Al 0.68 Sc 0.32 N 表现出明显的剩余极化, $\text{P}_{\text {r}} = {140}\,\,\mu \text{C}$ /cm 2和矫顽场, $\text{E}_{\text {c}} = {6.5}$ MV/cm,而薄膜泄漏阻止了 Al 0.64 Sc 0.36 N 铁电特性的定量测量。的剩余极化 $75~\mu \text{C}$ /cm 2对于 Al 0.68 Sc 0.32 N 和 $25\mu\text{C}$ /cm 2 for Al 0.64 Sc 0.36 N 在 120 K 下测量。通过测量的横向压电系数 (e 31, f ) 为 -1.3 C/m 2(向下切换),两种材料在室温下都确认了部分铁电切换Al 0.68 Sc 0.32 N为-0.3 C/m 2(向上切换),Al 0.64 Sc 0.36 N为-0.9 C/m 2(向下切换)和 -0.7 C/m 2(向上切换)。
更新日期:2020-12-01
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