We report the effect of N₂O post-fabrication annealing (PFA) on the electrical stability of dual gate, active split amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT). Optimized N₂O PFA at 360 °C for 3 h results in threshold voltage (V_TH) close to zero and an increase in the on-current almost 2 times than as-fabricated TFT. N₂O annealed TFT exhibited robust V_TH stability under positive bias temperature stress at 60 °C and negative bias illumination stress, exhibiting $\Delta \text{V}_{\text {TH}}$ of 0.1 V, and- 0.1 V, respectively, whereas as-fabricated TFT showed large $\Delta \text{V}_{\text {TH}}$ of ~ 10 V and −3 V. The X-ray photoelectron spectroscopy depth profile reveals the origin of such improvement as the increasing metal-oxide bonds and the reduction in oxygen vacancy / OH related defects.

中文翻译：

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通过 N2O 退火具有分裂有源层的极其稳定的双栅极共面非晶 InGaZnO 薄膜晶体管

我们报告了 N ₂ O 制造后退火 (PFA) 对双栅极、有源分裂非晶氧化铟镓锌 (a-IGZO) 薄膜晶体管 (TFT) 电稳定性的影响。在 360 °C 下优化 N ₂ O PFA 3 小时导致阈值电压 (V _TH ) 接近于零，并且导通电流增加几乎是制造 TFT 的 2 倍。N ₂ O 退火 TFT在 60 °C 的正偏压温度应力和负偏压光照应力下表现出强大的 V _TH稳定性，表现出 $\Delta \text{V}_{\text {TH}}$ 分别为 0.1 V 和 - 0.1 V，而制造的 TFT 显示大 $\Delta \text{V}_{\text {TH}}$ ~ 10 V 和 -3 V。X 射线光电子能谱深度剖面揭示了这种改进的起源，例如金属-氧化物键的增加和氧空位/OH 相关缺陷的减少。