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Electrochemically Exfoliating MoS2 into Atomically Thin Planar‐Stacking Through a Selective Lateral Reaction Pathway
Advanced Functional Materials ( IF 19.0 ) Pub Date : 2020-11-26 , DOI: 10.1002/adfm.202007840
Xuelei Pan 1 , Mengyu Yan 2 , Congli Sun 1, 3 , Kangning Zhao 4 , Wen Luo 1, 5 , Xufeng Hong 1 , Yunlong Zhao 6, 7 , Lin Xu 1 , Liqiang Mai 1, 8
Affiliation  

The production of atomically thin transition‐metal dichalcogenides (TMDs) has been investigated through various top‐to‐down exfoliation methods, such as mechanical and chemical exfoliation, while large‐scale chemical exfoliation is sluggish and needs over ten hours to achieve atomically thin TMDs. Herein, a new strategy is reported for exfoliating bulk MoS2 into two/three‐layer flakes within tens of seconds through a mild electrochemical treatment. This exfoliation method is driven by a lateral inward oxidation reaction starting from the typical layer edge with a rapid depth penetration, whereby a stacked few‐layer (two/three layers) structure is ultimately formed. This efficient reaction process is monitored based on an individual MoS2 on‐chip device combined with in situ Raman and cross‐sectional scanning transmission electron microscopy, and the uniformity of thickness is demonstrated. This preferentially initiated method can be also extended to produce few‐layer MoSe2 and the selective extraction mechanism is assumed to be related to intrinsic layer‐dependent energy band properties. Moreover, the special reassembled few‐layer MoS2 possesses great performance as functional materials in electrocatalysis (127 mV overpotential for hydrogen evolution reaction) and surface‐enhanced Raman spectroscopy (105 enhancement factor). These results illustrate the broad prospects of the reassembled few‐layer MoS2 for optics, catalysis, and sensors.

中文翻译:

通过选择性的侧向反应途径将MoS2电化学剥落成原子薄的平面堆叠

已经通过各种自上而下的剥落方法(例如机械和化学剥落)研究了原子稀薄的过渡金属二硫化氢(TMD)的生产,而大规模化学剥落速度缓慢,并且需要十多个小时才能达到原子薄的TMDs 。本文报道了一种新的策略,通过适度的电化学处理,可在数十秒内将大量的MoS 2剥落成两层/三层薄片。这种剥落方法是由横向向内氧化反应驱动的,该反应从典型的层边缘开始,并具有快速的深度渗透,从而最终形成堆叠的几层(两层/三层)结构。基于单独的MoS 2监控此有效的反应过程芯片与原位拉曼光谱和截面扫描透射电子显微镜相结合,证明了厚度的均匀性。这种优先启动的方法也可以扩展为产生几层MoSe 2,并且假定选择性提取机制与固有的依赖于层的能带性质有关。此外,特殊重组的多层MoS 2在电催化(氢释放反应的过电位为127 mV)和表面增强拉曼光谱(10 5增强因子)中作为功​​能材料具有出色的性能。这些结果说明了重新组装的多层MoS 2在光学,催化和传感器领域的广阔前景。
更新日期:2020-11-26
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