Effects of second-order resistive switching in memristors based on poly-p-xylylene have been detected for the first time. It has been shown that these memristive structures constitute a dynamic system whose behavior significantly depends on second-order short-term effects. More precisely, the switching time of memristive structures decreases when a pair of pulses (not necessarily with the same polarities) are applied with a certain delay between the pulses. The second-order effects are explained by an increase in the local temperature of a metallic conducting bridge because of Joule heating. A three-dimensional numerical dynamic model involving the drift—diffusion of metal ions in the polymer matrix has been developed. The experimentally observed effects have been reproduced within this model. The results of this work demonstrate the possibility of using the revealed effects to develop neuromorphic computing systems.

基于poly- p的忆阻器二阶电阻开关的影响首次检测到-二甲苯。研究表明，这些忆阻结构构成了一个动态系统，其行为在很大程度上取决于二阶短期效应。更精确地，当在脉冲之间具有一定延迟地施加一对脉冲（不一定具有相同极性）时，忆阻结构的切换时间减少。二次效应可以通过焦耳热导致金属导电桥的局部温度升高来解释。已经建立了涉及聚合物基质中金属离子的漂移扩散的三维数值动力学模型。实验观察到的效果已在此模型中重现。这项工作的结果证明了利用所揭示的效应开发神经形态计算系统的可能性。