Selectors have been proposed as a highly effective tool for suppressing substantial leakage currents without sacrificing the high density of resistive random-access memory (RRAM) crossbar arrays. Among various selector types, the programmable metallization cell (PMC) selector is promising due to its simple structure and high selectivity. In this work, we demonstrate a new PMC selector that exhibits bidirectional threshold switching behavior by implementing symmetric multilayer dielectrics. The proposed Ag/SiTe/HfO₂/SiTe/Ag selector device has a low off current (< 10⁻¹⁰ A), high selectivity (>10⁵), and low threshold voltage variation (< 0.05). Upon connection to a bipolar RRAM cell via a wire, the proposed selector successfully suppresses the leakage current of an unselected device below the threshold voltage.

已经提出选择器作为抑制大量泄漏电流而又不牺牲电阻式随机存取存储器（RRAM）交叉开关阵列的高密度的高效工具。在各种选择器类型中，可编程金属化单元（PMC）选择器由于其结构简单和选择性高而很有希望。在这项工作中，我们演示了一种新的PMC选择器，该选择器通过实现对称的多层电介质表现出双向阈值开关行为。拟议的Ag / SiTe / HfO ₂ / SiTe / Ag选择器器件具有低截止电流（<10 ^{− 10} A），高选择性（> 10 ⁵）和低阈值电压变化（<0.05）。通过导线连接到双极RRAM单元后，建议的选择器成功地将未选择器件的泄漏电流抑制在阈值电压以下。