Zinc selenide (ZnSe) thin films were grown on silicon (Si) wafer by thermal evaporation and the hetero-structure was subjected to annealing at various temperatures. X-ray diffractogram recorded for various samples were analysed to extract the structural information including crystallite size, strain and dislocation density. ZnSe films exhibited cubic structure with (111) orientation and the crystallite size has increased from about 21 nm to 43 nm upon annealing at 673 K. Annealing at temperature above this has degraded the films. I – V characterization has shown nonlinear relation and affected by post deposition annealing. Thermionic emission and Cheung models were applied to obtain various parameters that assess the performance of hetero-structured devices. Minimum ideality factor was observed (n = 1.75 from Cheung Model) for as deposited system and it increased after annealing. Analysis has proven that series resistance increases after annealing under air ambience.

中文翻译：

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I – V表征真空沉积的硒化锌–硅异质结

通过热蒸发在硅（Si）晶片上生长硒化锌（ZnSe）薄膜，并在各种温度下对异质结构进行退火。分析记录的各种样品的X射线衍射图，以提取结构信息，包括微晶尺寸，应变和位错密度。ZnSe薄膜表现出具有（111）取向的立方结构，并且在673 K退火时，微晶尺寸从约21 nm增加到43 nm。在此温度以上的退火使薄膜劣化。I – V表征已经显示出非线性关系，并且受后沉积退火的影响。应用热电子发射和Cheung模型来获得评估异质结构器件性能的各种参数。观察到最小理想因子（n = 1）。75（来自Cheung Model），用于沉积系统，退火后增加。分析证明，在空气气氛下退火后，串联电阻会增加。