In this paper, the instability mechanism of resistive random access memory (RRAM) was investigated, and a technique was developed to stabilize the distribution of high resistance states (HRS) and better concentrate the set voltage. Due to the accumulation of oxygen, an interface-type switching characteristic was observed on the I–V curves beneath the filament-type switching behavior. In this work, the interface-type switching characteristic is used to fit the natural distribution of HRS as an analysis of the instability mechanism. According to the results, the HRS distribution is attributed to the accumulation of excess oxygen ions left from the lower oxygen content and oxygen vacancy recombination during the reset process. The proposed solution with simple plasma treatment, can create an excess oxygen reservoir by changing the surface topography of the electrode to store the surplus oxygen ions from the reset process, eliminating the oxygen accumulation effect and further improving the device stability.

中文翻译：

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通过构造分析状态分布的储氧池来稳定电阻式随机存取存储器

本文研究了电阻式随机存取存储器（RRAM）的不稳定性机理，并开发了一种稳定高电阻态（HRS）分布并更好地集中设置电压的技术。由于氧的积累，观察到在一个接口类型的开关特性我- V灯丝型开关行为下方的曲线。在这项工作中，使用接口类型的切换特性来拟合HRS的自然分布，作为对不稳定机制的分析。根据结果​​，HRS分布归因于较低的氧含量和重置过程中氧空位重组所留下的过量氧离子的积累。提出的具有简单等离子体处理的解决方案可以通过更改电极的表面形貌来存储多余的氧离子，从而存储多余的氧离子，从而消除多余的氧累积效应，从而进一步提高器件的稳定性，从而可以存储过多的氧离子。