This review discusses critical aspects of patterning phase change materials (PCMs), including dry etching, wet clean, and encapsulation, as they dictate the reliability and functionality of the phase change random access memory devices. Specifically, alloys of germanium–antimony–tellurium are used as a model system, and the importance of PCM composition control, critical dimension control, high fidelity pattern transfer, and a system level of ambient control to avoid oxidation that can alter the materials’ functionality are highlighted. The research findings motivate the development of a state-of-the-art integrated system that combines dry etch, wet clean, and encapsulation into one platform to realize consistent and successful patterning of PCMs for future generations of the memory devices.

中文翻译：

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回顾对相变材料进行构图的最新进展

这篇评论讨论了构图相变材料（PCM）的关键方面，包括干法蚀刻，湿法清洁和封装，因为它们决定了相变随机存取存储设备的可靠性和功能性。具体来说，锗-锑-碲合金用作模型系统，PCM成分控制，临界尺寸控制，高保真度图案转移以及环境控制的系统级以避免氧化会改变材料功能的重要性突出显示。这项研究发现推动了一种先进的集成系统的开发，该系统将干法蚀刻，湿法清洗和封装结合到一个平台中，以实现用于下一代存储设备的PCM一致且成功的图案化。