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Achieving near-zero temperature coefficient of resistivity in atomic layer deposition TiSixN films through composition tuning
Journal of Vacuum Science & Technology A ( IF 2.9 ) Pub Date : 2020-10-07 , DOI: 10.1116/6.0000453
Corbin Feit 1 , Srishti Chugh 2 , Ajit R. Dhamdhere 2 , Hae Young Kim 2 , Shaurya Dabas 1 , Somilkumar J. Rathi 1, 2 , Niloy Mukherjee 2 , Parag Banerjee 1, 3, 4, 5
Affiliation  

Atomic layer deposition (ALD) is used to systematically vary the composition of TiSixN films by modulating the ratio of Ti and Si precursors with NH3 as a coreactant. The as-synthesized films have varying atomic (at.) % Si (0 ≤ x ≤ 24.2) to provide both metallic (i.e., TiN) and insulating (i.e., Si3N4) behavior. The competing material properties reduce the temperature coefficient of resistivity (TCR) of the film, thereby generating a regime where electrical conductance is independent of temperature. The TiSixN (Si = 3.4 at. %) film with 139.6 nm thickness exhibits a near-zero TCR of −23 ppm K−1, between 298 and 398 K, and a resistivity of 348.1 μΩ cm. Materials characterization using x-ray reflectometry, x-ray diffraction, x-ray photoelectron spectroscopy, and Raman spectroscopy, in conjunction with van der Pauw measurement and spectroscopic ellipsometry, are conducted to characterize film properties. Correlating structural, electrical, and optical properties provides insights into the electronic interactions of TiN with Si3N4, synthesized as an ALD nanocomposite thin film.

中文翻译:

通过成分调整获得原子层沉积TiSixN膜中电阻率的接近零温度系数

原子层沉积(ALD)用于通过以NH 3为共反应剂调节Ti和Si前驱体的比例来系统地改变TiSi x N膜的组成。合成后的薄膜具有变化的原子(原子)%Si(0≤x≤24.2),以提供金属(即TiN)和绝缘(即Si 3 N 4)性能。竞争的材料特性降低了薄膜的电阻率温度系数(TCR),从而产生了一种电导率与温度无关的状态。所述的TiSi X N(SI = 3.4原子%)与139.6纳米厚膜表现出-23 ppm的K的接近零的TCR -1,298K,和348.1的电阻率之间和398 μΩ厘米。进行了使用X射线反射仪,X射线衍射,X射线光电子能谱和拉曼光谱以及Van der Pauw测量和椭圆偏振光谱的材料表征,以表征薄膜的性能。相互关联的结构,电学和光学性质为TiN与Si 3 N 4的电子相互作用提供了见解,Si 3 N 4被合成为ALD纳米复合薄膜。
更新日期:2020-11-25
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