In this work, we have studied the influence of N₂/H₂ plasma gas flow rates on the hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) growth of indium nitride (InN) films. The influence of N₂/H₂ plasma gas flow rates on crystallinity, lattice distortion, phonon properties, and bandgap was analyzed. We found that the strain can be relieved fully or partially through the incorporation of H₂ in plasma. We present Raman scattering measurements on HCPA-ALD grown InN films. We found that the E₂-high phonon relaxation time increases with decreasing H₂ plasma flow. Atomic force microscopy (AFM) topography measurements revealed high surface roughness for InN films deposited with N₂/H₂. The spectroscopic ellipsometry analysis revealed that InN surface layers are thick and contain large void structures with the incorporation of H₂ in N₂ plasma. Combining the AFM surface morphology analysis with spectroscopic ellipsometry analysis, we propose a possible surface reaction mechanism for hydrogen incorporation on an InN surface. A clear shift of the absorption edge and a decrease in the absorption coefficient were observed when H₂ was introduced into N₂ flow. These results may provide a useful guide for understanding the HCPA-ALD growth mechanism of InN and In-rich nitrides.

中文翻译：

---

空心阴极等离子体辅助原子层沉积对N2 / H2等离子体对蓝宝石InN薄膜生长的影响

在这项工作中，我们研究了N ₂ / H ₂等离子体气体流速对氮化铟（InN）薄膜的空心阴极等离子体辅助原子层沉积（HCPA-ALD）生长的影响。分析了N ₂ / H ₂等离子气体流速对结晶度，晶格畸变，声子性质和带隙的影响。我们发现该菌株可以通过在血浆中掺入H ₂来完全或部分缓解。我们介绍了HCPA-ALD生长的InN薄膜的拉曼散射测量。我们发现E _2-高声子弛豫时间随H _2的减少而增加血浆流。原子力显微镜（AFM）形貌测量表明，沉积有N ₂ / H _2的InN膜具有较高的表面粗糙度。椭圆偏振光谱分析表明，在N ₂等离子体中结合了H ₂，InN表面层较厚且包含大的空隙结构。结合原子力显微镜表面形态学分析和椭圆偏振光谱分析，我们提出了一种可能的表面反应机理，用于将氢掺入InN表面。当将H ₂引入N ₂时，观察到吸收边缘的明显偏移和吸收系数的降低。流。这些结果可能为了解InN和富In氮化物的HCPA-ALD生长机理提供有用的指导。