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Band Engineering of Large-Twist-AngleGraphene/h−BNMoiré Superlattices with Pressure
Physical Review Letters ( IF 8.6 ) Pub Date : 2020-11-25 , DOI: 10.1103/physrevlett.125.226403
Yang Gao , Xianqing Lin , Thomas Smart , Penghong Ci , Kenji Watanabe , Takashi Taniguchi , Raymond Jeanloz , Jun Ni , Junqiao Wu

Graphene interfacing hexagonal boron nitride (hBN) forms lateral moiré superlattices that host a wide range of new physical effects such as the creation of secondary Dirac points and band gap opening. A delicate control of the twist angle between the two layers is required as the effects weaken or disappear at large twist angles. In this Letter, we show that these effects can be reinstated in large-angle (1.8°) graphene/hBN moiré superlattices under high pressures. A graphene/hBN moiré superlattice microdevice is fabricated directly on the diamond culet of a diamond anvil cell, where pressure up to 8.3 GPa is applied. The band gap at the primary Dirac point is opened by 40–60 meV, and fingerprints of the second Dirac band gap are also observed in the valence band. Theoretical calculations confirm the band engineering with pressure in large-angle graphene/hBN bilayers.

中文翻译:

大扭曲角石墨烯/h-BNMoiré超晶格的带能工程

石墨烯界面六方氮化硼(H-国阵)形成横向的莫尔条纹超晶格,这些晶格具有各种新的物理效应,例如创建次狄拉克点和带隙开口。由于效果在大的扭转角处减弱或消失,因此需要对两层之间的扭转角进行精细控制。在这封信中,我们表明可以大角度恢复这些效果(1.8°石墨烯/H-国阵高压下的莫尔超晶格。一种石墨烯/H-国阵莫尔超晶格微器件直接在钻石砧盒的钻石底片上制造,施加了高达8.3 GPa的压力。第一狄拉克点的带隙打开了40-60 meV,在价带中也观察到第二狄拉克带隙的指纹。理论计算证实了大角度压力下的带工程石墨烯/H-国阵 双层。
更新日期:2020-11-25
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