Defects usually degrade device performance. Thus, many techniques and effort are devoted to studying semiconductor defects. However, it is rarely known: i) how individual defects affect device performance; ii) how the impact depends on the device operating conditions; iii) how the impact varies from one defect to another; and iv) how these variations are correlated to the microscopic‐scale defect structure. To address these crucial questions, an array of correlative and spatially resolved techniques, including electroluminescence, photoluminescence, Raman, I–V characteristics, and high‐resolution electron microscopy, are used to characterize dislocation defects in GaAs solar cells. Significantly, the study is carried out in a series mode and in operando. This approach provides quantitative and definitive correlation between the atomistic structure of defects and their explicit effects on device performance, thus giving unprecedented insight into defect physics.

中文翻译：

---

GaAs太阳能电池中单个结构缺陷的影响：特征，结构和效应的相关性和操作性研究

缺陷通常会降低设备性能。因此，许多技术和努力致力于研究半导体缺陷。但是，鲜为人知：i）个别缺陷如何影响器件性能；ii）影响如何取决于设备的工作条件；iii）影响从一个缺陷到另一个缺陷如何变化；iv）这些变化如何与微观缺陷结构相关。为了解决这些关键问题，我们采用了一系列相关的和空间分辨的技术，包括电致发光，光致发光，拉曼，I – V特性和高分辨率电子显微镜用于表征GaAs太阳能电池中的位错缺陷。值得注意的是，该研究是以串联方式和操作方式进行的。这种方法在缺陷的原子结构及其对器件性能的显式影响之间提供了定量和确定的相关性，从而使人们对缺陷物理学有了空前的见识。