As the fresh blood of 2D family, non‐layered 2D materials (2DNLMs) have demonstrated great potential in the application of next‐generation optoelectronic devices. However, stemming from the weak light absorption brought by atomically thin thickness and the interfacial recombination brought by surface dangling bonds, traditional 2DNLM photodetectors are always accompanied by limited performance. Herein, a structure that integrates Si nanopillar array and non‐layered 2D In₂S₃ to construct an ultrasensitive photodetector is designed. In particular, periodically Si nanopillars can act as Fabry–Pérot‐enhanced Mie resonators that can effectively control and enhance the light absorption of 2D In₂S₃. On the other hand, a vertical built‐in electric field is introduced in the In₂S₃ channel to capture photogenerated holes and leave electrons recycling in In₂S₃, obtaining a high photogain. Benefiting from these two mechanisms, this proposed photodetector presents a high responsivity of 4812 A W⁻¹ and short rise/decay time of 5.2/4.0 ms at the wavelength of 405 nm. Especially, a high light on–off ratio greater than 10⁶ and a record‐high detectivity of 5.4 × 10¹⁵ Jones are achieved, representing one of the most sensitive photodetectors based on 2D materials. This deliberate device design concept suggests an effective scheme to construct high‐performance 2DNLM optoelectronic devices.

中文翻译：

---

全介电纳米结构法布里-珀罗增强的米氏共振，并结合了对超灵敏In2S3光电探测器的光增益调制。

作为2D系列的新鲜血液，非分层2D材料（2DNLM）在下一代光电设备的应用中显示出了巨大的潜力。然而，由于原子厚度薄带来的弱光吸收以及表面悬挂键带来的界面复合，传统的2DNLM光电探测器始终伴随着性能受限的问题。本文中，设计了一种将Si纳米柱阵列和非分层2D In ₂ S ₃集成在一起以构造超灵敏光电探测器的结构。特别是，周期性的硅纳米柱可以充当法布里-珀罗增强的Mie谐振器，可以有效控制和增强2D In ₂ S ₃的光吸收。另一方面，在In ₂ S ₃通道中引入了垂直的内置电场，以捕获光生空穴，并使电子在In ₂ S _3中循环，从而获得高光增益。受益于这两种机制，该提出的光电检测器在405 nm波长下具有4812 A W ^-1的高响应度和5.2 / 4.0 ms的短上升/下降时间。尤其是，高开/关比大于10 ⁶和创纪录的高探测灵敏度5.4×10 ¹⁵ Jones实现了，它代表了基于2D材料的最灵敏的光电探测器之一。这种刻意的器件设计概念提出了一种构建高性能2DNLM光电器件的有效方案。