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Fabrication of monoclinic-Cu2SnS3 thin-film solar cell and its photovoltaic device performance
Optical Materials ( IF 3.9 ) Pub Date : 2021-01-01 , DOI: 10.1016/j.optmat.2020.110668
Mohan Reddy Pallavolu , Ramesh Reddy Nallapureddy , Sang W. Joo , Chinho Park

Abstract Single-phase monoclinic Cu2SnS3 (M-CTS) thin films have a good tendency to obtain high conversion efficiency in photovoltaic devices. In this study, single-phase monoclinic Cu2SnS3 (M-CTS) thin films are prepared by a combination of sputtering and sulfurization processes. The M-CTS device shows a power conversion efficiency of 0.64% with an open-circuit voltage of 0.184 V, a short circuit current of 12.63 mA/cm2, and fill factor of 27.36. The required single-phase structure of M-CTS is confirmed by the X-ray diffraction and Raman spectroscopy. Quantitative analysis by a Rietveld refinement of the XRD patterns of CTS films reveal a monoclinic crystal structure. The M-CTS thin-film shows a compact morphology, direct optical bandgap of 0.95 eV, a thickness of ~1 μm, and electrical properties, including resistivity of 1.50 Ω-cm, hole mobility of 5.02 cm2/V, and carrier concentration of 8.30 × 1017 cm−3 with p-type conductivity. Based on these advantages, further studies are expected to drastically enhance the efficiency of M-CTS solar devices.

中文翻译:

单斜Cu2SnS3薄膜太阳能电池的制备及其光伏器件性能

摘要 单相单斜Cu2SnS3(M-CTS)薄膜在光伏器件中具有获得高转换效率的良好倾向。在这项研究中,单相单斜 Cu2SnS3 (M-CTS) 薄膜是通过溅射和硫化工艺的组合制备的。M-CTS 器件的功率转换效率为 0.64%,开路电压为 0.184 V,短路电流为 12.63 mA/cm2,填充因子为 27.36。X 射线衍射和拉曼光谱证实了 M-CTS 所需的单相结构。通过 Rietveld 精修 CTS 薄膜的 XRD 图案进行的定量分析揭示了单斜晶体结构。M-CTS 薄膜显示出紧凑的形态、0.95 eV 的直接光学带隙、~1 μm 的厚度和电性能,包括 1.50 Ω-cm 的电阻率,空穴迁移率为 5.02 cm2/V,载流子浓度为 8.30 × 1017 cm-3,具有 p 型导电性。基于这些优势,进一步的研究有望大大提高 M-CTS 太阳能设备的效率。
更新日期:2021-01-01
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