We have reported the impact of process variation of virtual- source carbon nanotube field-effect transistor (VS-CNFET) device externally connected to the epitaxial ferroelectric (FE) capacitor through the spectre parametric simulation. We have found that the FE materials with high remnant polarization produces better transfer characteristics and suppressed short channel effects (SCE). The increase in the ferroelectric thickness (t_fe) has brought out the good impact of 4x improvement in ON current and reduced subthreshold swing of 40 mV/decade. The ON current has been increased with increase in thickness of ferroelectric material and has followed a monotonic trend, where the leakage current becomes a major concern and optimization of crucial parameters such as a diameter of the nanotube has given importance. Relative to the VS- CNFET model, the negative capacitance VS-CNFET model has stacked in ring oscillator (RO) displays immune to delay variation and produces better switching characteristics.

中文翻译：

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负电容虚拟源碳纳米管FET器件和电路中工艺变化的仿真

我们已经通过幽灵参量模拟报告了外部连接至外延铁电（FE）电容器的虚拟源碳纳米管场效应晶体管（VS-CNFET）器件工艺变化的影响。我们发现具有高剩余极化率的FE材料产生更好的传输特性并抑制了短沟道效应（SCE）。铁电厚度的增加（t _fe）带来了4倍的导通电流改善效果，并降低了40 mV /十倍的亚阈值摆幅。导通电流随着铁电材料厚度的增加而增加，并遵循单调趋势，其中泄漏电流成为主要问题，关键参数（例如纳米管直径）的优化已变得至关重要。相对于VS-CNFET模型，负电容VS-CNFET模型堆叠在环形振荡器（RO）中，显示不受延迟变化的影响，并产生更好的开关特性。