Combining various two-dimensional materials into van der Waals (vdW) heterostructures has been shown to lead to emergent quantum systems. A heterostructure composed of a vdW topological insulator (TI) such as ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ with a quantum spin liquid (QSL) such as $\alpha \text{−}{\mathrm{RuCl}}_3$ is of great interest for the potential for the chiral Dirac electrons in the TI surface states to interact strongly with the fractionalized fermionic spin excitations in the QSL. We report the heteroepitaxial growth of ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ thin films on $\alpha \text{−}{\mathrm{RuCl}}_3$ as well as the characterization of their structural and electrical properties. ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ thin films with an atomically smooth and uniform surface are grown by molecular beam epitaxy. The heterostructure exhibits a preferential epitaxial relationship corresponding to $\left(5\times 5\right)\text{–}{\mathrm{Bi}}_2{\mathrm{Se}}_3/(2\sqrt{3}\times 2\sqrt{3}$) $R{30}^{\circ }\text{–}\alpha \text{−}{\mathrm{RuCl}}_3$ commensurate supercells with a periodicity of 1.2 nm. The formation of the superlattice despite a lattice mismatch as large as 60% is attributed to the vdW heteroepitaxy. Magnetotransport measurements as a function of temperature show ${\mathrm{Bi}}_2{\mathrm{Se}}_3$ films grown on $\alpha \text{−}{\mathrm{RuCl}}_3$ are heavily $n$-doped, $n_e\sim {10}^{14}\mathrm{c}{\mathrm{m}}^{\text{–}2}$, with mobility μ $\sim 450\mathrm{c}{\mathrm{m}}^2{\mathrm{V}}^{\text{–}1}{\mathrm{s}}^{\text{–}1}$ at low temperatures.

中文翻译：

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在α-RuCl3上异质外延生长Bi2Se3th薄膜

已经证明将各种二维材料结合到范德华（vdW）异质结构中会导致出现量子系统。由vdW拓扑绝缘体（TI）组成的异质结构，例如${\mathrm{双}}_2{\mathrm{硒}}_3$ 用量子自旋液体（QSL）如 $\alpha \text{-}{\mathrm{氯化钌}}_3$TI表面态中的手性狄拉克电子与QSL中的分级费米离子自旋激发强烈相互作用的潜力引起了人们的极大兴趣。我们报告了异质外延生长${\mathrm{双}}_2{\mathrm{硒}}_3$ 上的薄膜 $\alpha \text{-}{\mathrm{氯化钌}}_3$ 以及它们的结构和电特性的表征。 ${\mathrm{双}}_2{\mathrm{硒}}_3$通过分子束外延生长具有原子光滑和均匀表面的薄膜。异质结构表现出优先的外延关系，对应于$（5\times 5）\text{–}{\mathrm{双}}_2{\mathrm{硒}}_3/（2\sqrt{3}\times 2\sqrt{3}$） $\mathrm{[R}{30}^{\circ }\text{–}\alpha \text{-}{\mathrm{氯化钌}}_3$周期为1.2 nm的相称超级电池。尽管晶格失配高达60％，但超晶格的形成归因于vdW异质外延。磁传输测量与温度的关系${\mathrm{双}}_2{\mathrm{硒}}_3$ 电影长在 $\alpha \text{-}{\mathrm{氯化钌}}_3$ 非常沉重 $ñ$掺杂 ${ñ}_{Ë}〜{10}^{14}\mathrm{C}{\mathrm{米}}^{\text{–}2}$，具有迁移率μ $〜450\mathrm{C}{\mathrm{米}}^2{\mathrm{V}}^{\text{–}\mathrm{1个}}{\mathrm{s}}^{\text{–}\mathrm{1个}}$ 在低温下。