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Voltage-Controlled Magnetic Reversal in Orbital Chern Insulators
Physical Review Letters ( IF 8.6 ) Pub Date : 2020-11-24 , DOI: 10.1103/physrevlett.125.227702
Jihang Zhu , Jung-Jung Su , A. H. MacDonald

Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect and have so far been identified experimentally in magnetically doped topological insulator thin films and in bilayer graphene moiré superlattices. We classify Chern insulator ferromagnets as either spin or orbital, depending on whether the orbital magnetization results from spontaneous spin polarization combined with spin-orbit interactions, as in the magnetically doped topological insulator case, or directly from spontaneous orbital currents, as in the moiré superlattice case. We argue that, in a given magnetic state, characterized, for example, by the sign of the anomalous Hall effect, the magnetization of an orbital Chern insulator will often have opposite signs for weak n and weak p electrostatic or chemical doping. This property enables pure electrical switching of a magnetic state in the presence of a fixed magnetic field.

中文翻译:

轨道陈绝缘子中的压控磁反转

陈氏绝缘子铁磁体的特征在于量化的异常霍尔效应,到目前为止,在磁掺杂拓扑绝缘子薄膜和双层石墨烯莫尔超晶格中已通过实验确定。我们将Chern绝缘子铁磁体分类为自旋或轨道,具体取决于轨道磁化是自发自旋极化结合自旋轨道相互作用(如在磁掺杂拓扑绝缘子情况下)还是直接自发自轨道电流(如莫尔超晶格)产生的案件。我们认为,在给定的磁性状态下,例如以异常霍尔效应的征兆为特征,轨道的Chern绝缘子的磁化强度通常会具有相反的征兆ñ 和弱 p静电或化学掺杂。该特性使得能够在固定磁场存在的情况下对磁性状态进行纯电切换。
更新日期:2020-11-25
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