The development of defect populations after proton irradiation of $n$-type $4H$-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence spectroscopy. A comprehensive model is suggested describing the evolution and interconversion of irradiation-induced point defects during annealing below $1000{}^{\circ }\mathrm{C}$. The model proposes the ${\mathrm{EH}}_4$ and ${\mathrm{EH}}_5$ traps frequently found by DLTS to originate from the ($+$/0) charge transition level belonging to different configurations of the carbon antisite-carbon vacancy (CAV) complex. Furthermore, we show that the transformation channel between the silicon vacancy (${\mathrm{V}}_{\mathrm{Si}}$) and CAV is effectively blocked under $n$-type conditions, but becomes available in samples where the Fermi level has moved towards the center of the band gap due to irradiation-induced donor compensation. The annealing of ${\mathrm{V}}_{\mathrm{Si}}$ and the carbon vacancy (${\mathrm{V}}_{\mathrm{C}}$) is shown to be dominated by recombination with residual self-interstitials at temperatures of up to $400{}^{\circ }\mathrm{C}$. Going to higher temperatures, a decay of the CAV pair density is reported which is closely correlated to a renewed increase of ${\mathrm{V}}_{\mathrm{C}}$ concentration. A conceivable explanation for this process is the dissociation of the CAV pair into separate carbon anitisites and ${\mathrm{V}}_{\mathrm{C}}$ defects. Lastly, the presented data supports the claim that the removal of free carriers in irradiated SiC is due to introduced compensating defects and not passivation of shallow nitrogen donors.

中文翻译：

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质子辐照n型4H-SiC中退火引起的一次缺陷转化途径

质子辐照后缺陷种群的发展。 $ñ$-类型 $4H$通过深能级瞬态（DLTS）和光致发光光谱研究了-SiC和随后的退火实验。建议使用一个综合模型来描述低于退火温度下辐照引起的点缺陷的演变和相互转化$1000{}^{\circ }\mathrm{C}$。该模型提出了$H_4$ 和 $H_5$ DLTS经常发现的陷阱源自（$+$/ 0）电荷转移能级，属于碳反位-碳空位（CAV）复合物的不同构型。此外，我们显示了硅空位之间的转换通道（${\mathrm{V}}_{硅}$），并且CAV在以下情况下被有效屏蔽 $ñ$-型条件，但在费米能级由于辐射诱导的供体补偿而移向带隙中心的样品中可用。退火${\mathrm{V}}_{硅}$ 和碳空位（${\mathrm{V}}_{\mathrm{C}}$）被证明是在温度高达20 $400{}^{\circ }\mathrm{C}$。到更高的温度，CAV对密度的下降据报道与CV的新增加密切相关。${\mathrm{V}}_{\mathrm{C}}$浓度。这个过程的一个可能的解释是，CAV对解离成单独的碳无烟煤和${\mathrm{V}}_{\mathrm{C}}$缺陷。最后，所提供的数据支持这样的主张，即被辐照的SiC中游离载流子的去除是由于引入的补偿缺陷而不是浅氮供体的钝化引起的。