Abstract Crystal structure, magnetic and electrical properties of thin U-Mo films and their hydrides prepared by reactive sputter deposition from metallic targets is studied. The films are metallic but with high values of electrical resistivity. Both bcc U0.79Mo0.21 thin film and the hydride (UH3)0.74Mo0.26 (β-UH3 structure type) have a very strong texture. Superconductivity was identified below Tc = 0.55 K for U0.79Mo0.21. The critical field of 1.0 T is exceeding that of α-U (0.3 T). The hydride film (UH3)0.74Mo0.26 is a ferromagnet with the Curie temperature TC = 165 K, higher concentration of Mo somewhat reduces the TC value. The U-Mo films and hydrides exhibit the net negative temperature coefficient of resistivity, TCR = dρ/dT, attributed to the randomness on atomic scale, yielding very strong scattering of electrons and weak localization.

中文翻译：

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无序对 U-Mo 和 U-Mo-H 薄膜磁性和导电性能的影响

摘要 研究了反应溅射沉积金属靶材制备的U-Mo薄膜及其氢化物的晶体结构、磁电性能。这些薄膜是金属的，但具有高电阻率值。bcc U0.79Mo0.21 薄膜和氢化物 (UH3)0.74Mo0.26（β-UH3 结构型）都具有非常强的织构。对于 U0.79Mo0.21，在 Tc = 0.55 K 以下确定超导性。1.0 T 的临界场超过了 α-U (0.3 T) 的临界场。氢化物薄膜 (UH3)0.74Mo0.26 是一种铁磁体，居里温度 TC = 165 K，较高的 Mo 浓度会在一定程度上降低 TC 值。U-Mo 薄膜和氢化物表现出电阻率的净负温度系数，TCR = dρ/dT，归因于原子尺度上的随机性，产生非常强的电子散射和弱局部化。