A mechanism pertaining to an anomalous optical anisotropy under a strong field in semiconductors having cubic structure is proposed. The valence-conduction band transitions of valence electrons located around atomic bonds re-distribute electrons between bands and, consequently, produce symmetry defects in local electronic density. The optical anisotropy is due to these symmetry defects, which are the sources for localized and non-compensated dipole moments randomly distributed within the crystal. The quantum time-dependent probability amplitude method, combined with classical electrodynamics, demonstrate that the non-compensated dipole moments destroy the optical isotropy of a crystal. To compare the scheme with an experiment, the theory is applied to single crystal. Within a strong-field IR regime, the predicted four-fold symmetry of optical anisotropy, along with its amplitude, correlate well with an experiment.

在具有立方结构的半导体中，提出了一种与强场下的光学各向异性有关的机理。位于原子键周围的价电子的价导带跃迁使电子在能带之间重新分布，因此在局部电子密度中产生对称缺陷。光学各向异性是由于这些对称缺陷引起的，这些对称缺陷是随机分布在晶体内的局部和非补偿偶极矩的来源。量子时间相关的概率振幅方法，结合经典的电动力学方法，证明了未补偿的偶极矩破坏了晶体的光学各向同性。为了将该方案与实验进行比较，将该理论应用于单晶。在强场红外范围内，光学各向异性的预测四重对称性及其幅度与实验关系密切。