In this work, electron beam lithography proximity effect correction (PEC) was experimentally studied for patterning of Si photonic waveguides with a relatively thick resist mask. Beam’s energy density distribution (EDD) was experimentally extracted by the line exposure method; however, exposure lines in this work were developed after cleavage with a high-contrast process to reduce developer-related effects. The measured line spread function was fitted to a 4-Gaussian function to model mid-range energy densities accurately. The extracted EDD showed less proximity effects compared to conventional Monte-Carlo simulation performed by a commercial software. PEC processes with both techniques were experimentally compared for a Si photonic waveguide pattern with different side-cladding trench widths. Microscopic images confirmed that the presented calibration method could achieve better development conditions near the required clearance dosage. Single-mode propagation loss for a 500נ220nm Si wire waveguide was reduced from 3.2 to 2.4dBcm⁻¹ using the presented process.

在这项工作中，实验研究了电子束光刻接近效应校正（PEC），以使用相对较厚的抗蚀剂掩模对硅光子波导进行图案化。通过线曝光法实验提取了光束的能量密度分布（EDD）；但是，这项工作中的曝光线是在经过高对比度切割后显影的，以减少与显影剂相关的影响。将测得的线扩散函数拟合为4-Gaussian函数，以准确地模拟中程能量密度。与由商业软件执行的常规蒙特卡洛模拟相比，提取的EDD显示出较小的邻近效应。实验比较了两种技术的PEC工艺，以比较具有不同侧包层沟槽宽度的Si光子波导图案。显微图像证实，提出的校准方法可以在所需的清除剂量附近达到更好的显影条件。500נ220 nm硅线波导的单模传播损耗从3.2dBcm降低到2.4dBcm^-1使用提出的过程。