Abstract In this manuscript, we have reported the simultaneous enhancement in Seebeck coefficient and electrical conductivity by controlling the density and size of the grains. The grain boundaries are acting as barriers for the low energy carriers at the grain boundaries, which resulted in the enhancement of mobility of carriers. The high mobility of carriers simultaneously enhances the Seebeck coefficient and conductivity of the material under investigation. This argument was tested by deliberately engineering the grain boundaries in bulk Zinc Tin Oxide (ZnSnO) by the post thermal annealing method. The ZnSnO pallets were prepared by mixing of ZnO and Sn metal powders (24:1) by hydraulic press at very high pressure. SEM images demonstrated that the grain boundaries were found to be increased with increase in annealing temperature. It was observed that the values of Seebeck coefficient and power factor were increased to maximum (120 μV/°C and 4.8 × 10 − 4 W m−1 K−2 respectively) at maximum annealing temperature. While the supplementary measurements like XRD and Raman spectroscopy were used to support this argument.

中文翻译：

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通过使用后退火的晶界工程同时提高 ZnSnO 中的塞贝克系数和电导率

摘要在这篇手稿中，我们报道了通过控制晶粒的密度和尺寸同时提高塞贝克系数和电导率。晶界对晶界处的低能载流子起到了屏障的作用，从而提高了载流子的迁移率。载流子的高迁移率同时提高了所研究材料的塞贝克系数和电导率。通过后热退火方法有意设计块状氧化锌锡 (ZnSnO) 中的晶界来测试这一论点。ZnSnO 托盘是通过在非常高的压力下通过液压机混合 ZnO 和 Sn 金属粉末 (24:1) 来制备的。SEM 图像表明，发现晶粒边界随着退火温度的增加而增加。据观察，在最高退火温度下，塞贝克系数和功率因数的值增加到最大值（分别为 120 μV/°C 和 4.8 × 10 - 4 W m-1 K-2）。而像 XRD 和拉曼光谱这样的补充测量被用来支持这个论点。