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Antimony induced Cd0.4Co0.6Se thin film: Study of photovoltaic performance by simple chemically grown method
Optik ( IF 3.1 ) Pub Date : 2020-11-23 , DOI: 10.1016/j.ijleo.2020.166057
Muddsar L. Gaur , Vijaykumar M. Bhuse , Kallappa R. Sanadi

The induced binary/ternary types of inorganic materials compound are worked as fundamental applications in transformation of solar light energy into electrical energy harvesting. So in this paper we report on the synthesis of antimony induced Cd0.4Co0.6Se thin films by using simple chemical bath deposition method (CBD). A thin film shows the variable thickness with changing antimony concentration on glass substrate. The x-ray diffraction study revealed that the obtained compounds are affirmed to nearly cubic stages. The optical absorbance examines gave an assimilation edge at ∼650 nm. The x-ray diffraction study shows that nearly cubic morphology with optical band gap of 1.92–2.10 eV with optical absorbance examines at ∼650 nm at room temperature. DC conductivity estimations indicated nearness of semiconducting activity. A photo-electrochemical cell (PEC) shows the transformation of solar cell efficiency effectively decreasing from 1.121 to 0.236 % with a fill factor of 60.80 to 29.64 % with increment antimony concentration.



中文翻译:

锑诱导的Cd 0.4 Co 0.6 Se薄膜:通过简单的化学生长方法研究光伏性能

诱导的二元/三元类型的无机材料化合物被用作将太阳能转化为电能的基础应用。因此,在本文中,我们报道了锑诱导的Cd 0.4 Co 0.6的合成通过使用简单的化学浴沉积法(CBD)沉积硒薄膜。薄膜显示出随着玻璃基板上锑浓度的变化而变化的厚度。X射线衍射研究表明,所获得的化合物被确认为接近立方级。光学吸光度检查给出了〜650 nm的同化边缘。X射线衍射研究表明,在室温下,约650 nm处的光学带隙为1.92–2.10 eV且具有光吸收率的近似立方形态。直流电导率估计值表明半导体活动接近。光电化学电池(PEC)显示,随着锑浓度的增加,太阳能电池效率的转化有效地从1.121%降低到0.236%,填充系数从60.80降低到29.64%。

更新日期:2020-12-07
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