Abstract Undoped and antimony-doped lead telluride (Sb-doped PbTe) thin films were deposited onto borosilicate and fluorine-doped tin oxide (FTO) glass substrates by a spray pyrolysis method. The structural and optical properties were investigated. The X-ray diffraction (XRD) patterns indicate that PbTe and PbTe:Sb on both substrates had a cubic structure. Sb doping yields a decrease in lattice constant and crystallite size of PbTe. The onset ( E g onset ) and direct ( E g di ) optical band gap increases with Sb incorporation into the PbTe lattice. The E g onset and E g di values were in the range of 1.17–1.22 eV and 1.40–1.53 eV for each condition, respectively. Defects and disorders in the PbTe lattice were also performed due to Sb incorporation into both neighboring vacancies of the Pb and Te atoms.

中文翻译：

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未掺杂和掺杂锑的碲化铅薄膜的结构和光学特性

摘要 通过喷雾热解法在硼硅酸盐和掺氟氧化锡 (FTO) 玻璃基板上沉积未掺杂和掺锑碲化铅 (Sb 掺杂 PbTe) 薄膜。研究了结构和光学性质。X 射线衍射 (XRD) 图案表明两种衬底上的 PbTe 和 PbTe:Sb 均具有立方结构。Sb 掺杂会降低 PbTe 的晶格常数和微晶尺寸。起始（ E g onset ）和直接（ E g di ）光学带隙随着 Sb 并入 PbTe 晶格而增加。对于每种条件，E g onset 和 E g di 值分别在 1.17-1.22 eV 和 1.40-1.53​​ eV 的范围内。由于 Sb 并入 Pb 和 Te 原子的相邻空位，也导致 PbTe 晶格的缺陷和紊乱。