The antimony tri-sulphide (Sb₂S₃) films were prepared by thermal evaporation technique. Four thicknesses (300, 521, 643 and 789 nm) were investigated. X-ray diffraction (XRD) analysis showed the amorphous structure of Sb₂S₃ films. Optical analyses revealed that Sb₂S₃ films exhibited optical energy gap between (1.98–1.16 eV) relaying on the film thickness. The films absorption coefficient was found to be higher than 2 × 10⁴ cm⁻¹(above its related optical energy gap) which makes these films reliable absorbers in photovoltaic applications. Optical constants were analyzed using Swanipole's method. The dark dc conductivity measurements of Sb₂S₃ thin films were conducted in the temperature range 298–503 K. The conduction mechanize was analyzed via Mott's variable -range hopping in three dimensions model. The correlated conductivity mechanize with increasing film thickness changed from extended states to localized states. The results revealed that both optical gap and activation energy decreased as the film thickness enhanced.

采用热蒸发技术制备了三硫化锑（Sb ₂ S ₃）薄膜。研究了四种厚度（300、521、643和789 nm）。X射线衍射（XRD）分析显示出Sb ₂ S ₃膜的非晶结构。光学分析表明，Sb ₂ S ₃薄膜的光学能隙介于（1.98-1.16 eV）之间，取决于薄膜的厚度。发现膜的吸收系数高于2×10 ⁴ cm ^-1（高于其相关的光能隙），这使得这些薄膜在光伏应用中成为可靠的吸收体。使用Swanipole方法分析光学常数。Sb ₂ S ₃薄膜的暗直流电导率测量在298–503 K的温度范围内进行。通过Mott的变程跳变在三维模型中分析了传导机械化。随着膜厚度的增加，相关的电导率机械化，从延伸状态变为局部状态。结果表明，随着膜厚度的增加，光学间隙和活化能均减小。