Abstract A striking correlation is observed between the characteristic defect-mediated deep level luminescence and deposition temperature of the zinc oxide (ZnO) thin films made by atomic layer deposition (ALD) technique. Near-ideal and virtually defect-free zinc oxide films are deposited at a temperature of 150°C. However, distinct long-wavelength broadband luminescence features are identified for yellow (maxima at 570 nm) and green (maxima at 500 nm) at lower and higher temperature regimes of 150°C, respectively. The decay time for yellow and green luminescence is different, having slower decay components for the yellow luminescence. The multi-step relaxation process governing the luminescence is discussed under the theory of efficient trapping of a photo-generated hole at a surface species in the first step, and radiative recombination at a deep-level acceptor type defect in the final step. Excess non-radiative surface recombination at the surface species is responsible for the shortening of the decay time of green emission line.

中文翻译：

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ALD技术沉积氧化锌薄膜的生长和发光特性

摘要 通过原子层沉积 (ALD) 技术制备的氧化锌 (ZnO) 薄膜的特征缺陷介导的深能级发光与沉积温度之间存在显着的相关性。接近理想且几乎无缺陷的氧化锌薄膜在 150°C 的温度下沉积。然而，在 150°C 的较低和较高温度范围内，黄色（最大波长为 570 nm）和绿色（最大波长为 500 nm）具有明显的长波长宽带发光特征。黄光和绿光的衰减时间不同，黄光衰减较慢。在第一步有效捕获光生空穴的理论下讨论了控制发光的多步弛豫过程，最后一步是在深能级受体型缺陷处进行辐射复合。表面物种处过多的非辐射表面复合是缩短绿色发射线衰减时间的原因。