Abstract As an emerging technology, nanoscale non-volatile memory technology can be used for in-memory computing and neuromorphic computing. However, the deeper understanding of the charge transport and resistive switching mechanism in memristor devices are still needed to improve the device properties for practical application. Herein, we first synthesized the MoO3 nanorods and studied the structural properties by XRD, SEM and TEM. The elemental compositions were confirmed through EDX and XPS analysis. The resistive switching operation of Au/ MoO3/p-Si ReRAM device was examined and its conductive mechanism was analyzed by space-charge limited conduction theory. The changes of high resistive state to low resistive state and vice-versa in ReRAM device is owing to the movement of oxygen vacancies in MoO3 structure. For comparison, silver atoms were intercalated into MoO3 Nanostructures and device performance was also analyzed. The improved switching behavior of Ag doped Au/ MoO3/p-Si device is due to Ag doping effect in the formation of conducting paths in the MoO3 active material. The obtained results indicate the contribution of Ag atoms in conduction filament enhance the bipolar resistive switching performance.

中文翻译：

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Ag掺杂对用于非易失性存储器的三氧化钼（MoO3）纳米结构中双极开关操作的影响

摘要 作为一种新兴技术，纳米级非易失性存储器技术可用于内存计算和神经形态计算。然而，仍需要更深入地了解忆阻器器件中的电荷传输和电阻切换机制，以改善实际应用中的器件性能。在此，我们首先合成了 MoO3 纳米棒，并通过 XRD、SEM 和 TEM 研究了其结构特性。通过 EDX 和 XPS 分析确认元素组成。研究了 Au/MoO3/p-Si ReRAM 器件的电阻开关操作，并通过空间电荷限制传导理论分析了其导电机制。ReRAM 器件中高阻态到低阻态的变化以及反之亦然是由于 MoO3 结构中氧空位的移动。为了比较，银原子被插入到 MoO3 纳米结构中，并且还分析了器件性能。Ag 掺杂 Au/MoO3/p-Si 器件的改进开关行为是由于 Ag 掺杂效应在 MoO3 活性材料中形成导电路径。所得结果表明导电丝中银原子的贡献增强了双极电阻开关性能。