Quaternary sulfide Cu₂CoSnS₄ (CCTS) thin films were deposited by vacuum thermal evaporation on heated substrates. The substrates temperatures are ranged from room temperature to 200 °C. After what, the as-deposited films were sulfurized under vacuum at 450 °C to optimize the stoechiometric stannite CCTS phase. The crystalline structure of the sulfurized CCTS thin films was examined by X-ray diffraction technique and Raman spectroscopy. Surface morphological, elemental compositions and optical properties were explored by scanning electron microscopy, energy dispersive spectroscopy and spectrophotometer UV-VIS-NIR, respectively. X-ray diffraction and Raman analysis confirm that the sulfurization process leads to the formation of single CCTS phase. Optical results show high absorption coefficients of 10⁵ cm^-1 in the visible range with direct optical band-gap in the range 1.40-1.43 eV. In addition, the p-type conductivity of CCTS thin films was confirmed by hot probe method. The degradation of methylene blue in the presence of post-sulfurized samples was found in the range of 62-73%. Optical and Photocatalytic properties proves that post-sulfurized samples are suitable for application in photovoltaic and photocatalysis.

硫化季铵Cu ₂ CoSnS ₄（CCTS）薄膜通过真空热蒸发沉积在加热的基板上。基板温度范围为室温到200°C。之后，将沉积的薄膜在真空中于450°C的温度下硫化，以优化化学计量的亚锡CCTS相。通过X射线衍射技术和拉曼光谱检查了硫化的CCTS薄膜的晶体结构。分别通过扫描电子显微镜，能量色散光谱和分光光度计UV-VIS-NIR探索了表面形态，元素组成和光学性质。X射线衍射和拉曼分析证实了硫化过程导致了单CCTS相的形成。光学结果显示高吸收系数10 ⁵ cm ^-1在可见光范围内，直接光学带隙在1.40-1.43 eV范围内。另外，通过热探针法确认了CCTS薄膜的p型导电性。在存在后硫化样品的情况下，发现亚甲基蓝的降解率为62-73％。光学和光催化性能证明了后硫化的样品适用于光伏和光催化。