The low breakdown strength (BDS) of antiferroelectric ceramics, which become failure before undergoing electrical field induced antiferroelectric-ferroelectric phase transition, have seriously restricted the progress of pulsed power capacitors. The method of refining grain sizes via the incorporation of glass additive is supposed to be an outstanding strategy to boost the BDS. Herein, the (Pb_0.91Ba_0.015La_0.05)(Zr_0.6Sn_0.4)O₃ (PBLZS) antiferroelectric ceramics with the introduce of BaO-B₂O₃-Al₂O₃-SiO₂ (BBAS) glass are designed and synthesized by a traditional solid-state reaction. When the glass content is 0.4 wt%, the recoverable energy storage density (W_rec) increases by 215 % from 2.0 J/cm³ to 6.3 J/cm³, together with a greatly enhanced BDS up to 390 kV/cm versus 270 kV/cm of pure ceramics. Meanwhile, the corresponding sintering temperature is remarkably decreased from 1300℃ to 1100℃. The superior charge and discharge performance can be obtained under the electrical field of 310 kV/cm, including a giant current density (1184.7 A/cm²), a high power density (184.2 MW/cm³), and an ultra-fast discharge period (40 ns). The prominent energy storage properties and low sintering temperature make it become a good candidate for fabricating multilayer pulsed power ceramic capacitors.

反铁电陶瓷的低击穿强度（BDS）在经历电场感应的反铁电-铁电相变之前就已经失效，这严重限制了脉冲功率电容器的发展。通过掺入玻璃添加剂来细化晶粒尺寸的方法被认为是提高BDS的杰出策略。在此，通过引入BaO-B ₂ O ₃ -Al ₂ O ₃ -SiO ₂（Pb _0.91 Ba _0.015 La _0.05）（Zr _0.6 Sn _0.4）O ₃（PBLZS）反铁电陶瓷（BBAS）玻璃是通过传统的固态反应设计和合成的。当玻璃含量为0.4 wt％时，可回收的储能密度（W _rec）从2.0 J / cm ³增加到6.3 J / cm ³，增加了215％，并且BDS大大提高，从390 kV / cm到270 kV / cm的纯陶瓷。同时，相应的烧结温度从1300℃显着降低到1100℃。在310 kV / cm的电场下可以获得出色的充电和放电性能，包括巨大的电流密度（1184.7 A / cm ²），高功率密度（184.2 MW / cm ^3））和超快放电周期（40 ns）。突出的储能性能和较低的烧结温度使其成为制造多层脉冲功率陶瓷电容器的理想选择。