Abstract The work is devoted to the study of p-GaN: Mg epitaxial layers grown by the ammonia MBE technique. We find that the conductivity of GaN layers doped with Mg does not change with a postgrowth heat treatment. Formation of Mg3N2 nanocrystallites on GaN surface during epitaxial growth of the GaN layer with a high magnesium doping level was detected by the RHEED technique for the first time. It was shown that the Mg3N2 nanocrystallites formation competes with the acceptor states formation process. It has been proposed that the growth temperature can be applied as an additional “tuning” mechanism which affects the Mg incorporation into the growing GaN:Mg layers.

中文翻译：

---

使用 NH3-MBE 技术在 GaN:Mg 层生长过程中形成 Mg3N2 纳米微晶

摘要 本研究致力于氨MBE技术生长的p-GaN:Mg外延层的研究。我们发现掺杂有 Mg 的 GaN 层的电导率不会随着生长后热处理而改变。RHEED 技术首次检测到在外延生长具有高镁掺杂水平的 GaN 层期间在 GaN 表面形成 Mg3N2 纳米微晶。结果表明，Mg3N2 纳米微晶的形成与受体态的形成过程竞争。有人提出，生长温度可以作为一种额外的“调节”机制来应用，它会影响 Mg 并入生长中的 GaN:Mg 层。