Abstract This study presents dielectric properties investigation of hafnium oxide (HfOx), aluminum oxide (AlOx) and tantalum oxide (TaOx) thin films and HfAlTaOx compound based on their multilayer structure. The thickness of all films under study was 40 nm. The investigated films were produced from metal-organic precursors by Plasma Enhanced Atomic Layer Deposition (PEALD). Based on the dielectrics mentioned above, we produced MIM capacitors (Metal – Insulator – Metal) and researched their properties. Dielectric constant for HfOx, AlOx, TaOx and HfAlTaOx was 20, 9, 31 and 13, correspondingly. Volumetric efficiency of MIM capacitors based on HfOx, AlOx, TaOx and HfAlTaOx was 4.4 nF/mm2, 2 nF/mm2, 6.8 nF/mm2 and 2.9 nF/mm2, correspondingly. Dielectric strength of HfAlTaOx compound was significantly higher (8.2 MV/cm) compared to other dielectrics: HfOx (3.6 MV/cm), AlOx (6.4 MV/cm), TaOx (1.5 MV/cm). The greatest values were observed in the compound of significantly higher dielectric strength which is comparable to silicon oxide. This study was the first to demonstrate the advantages of the produced compound, such as high dielectric constant and dielectric strength.

中文翻译：

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一种基于原子层沉积多层结构的化合物介电性能研究

摘要 本研究基于多层结构对氧化铪 (HfOx)、氧化铝 (AlOx) 和氧化钽 (TaOx) 薄膜以及 HfAlTaOx 化合物的介电性能进行了研究。所研究的所有薄膜的厚度为 40 nm。所研究的薄膜是通过等离子体增强原子层沉积 (PEALD) 由金属有机前体制成的。基于上述电介质，我们生产了 MIM 电容器（金属 - 绝缘体 - 金属）并研究了它们的特性。HfOx、AlOx、TaOx 和 HfAlTaOx 的介电常数相应地为 20、9、31 和 13。基于 HfOx、AlOx、TaOx 和 HfAlTaOx 的 MIM 电容器的体积效率相应地为 4.4 nF/mm2、2 nF/mm2、6.8 nF/mm2 和 2.9 nF/mm2。与其他电介质相比，HfAlTaOx 化合物的介电强度明显更高（8.2 MV/cm）：HfOx (3.6 MV/cm)、AlOx (6.4 MV/cm)、TaOx (1.5 MV/cm)。在与氧化硅相当的具有显着更高介电强度的化合物中观察到最大值。这项研究首次证明了所生产的化合物的优点，例如高介电常数和介电强度。