Abstract Substitutional doping is the prominent way to modify the photoanode of the photoelectrochemical system by which its response to solar spectrum can be manipulated. Here, we introducing the transition metal Cr into the CdSe host lattice to investigate the photoelectrochemical (PEC) performance. The Cr doped CdSe thins films were deposited by periodic cyclic voltammetry method. XRD and Raman spectroscopy confirm the cubic phase of all grown films with the good substitution of Cr3+ is on Cd2+ lattice site in CdSe host lattice. Surface morphology and compositional conformation were studied by SEM and EDAX. Transmission electron microscopy shows the good polycrystalline nature of all deposited samples. The Cr substitution in CdSe host lattice enhances the visible light absorption due to an increase in the specific surface area of the film. The photoelectrochemical (PEC) performance was investigated using the three-electrode system which reveals that the optimum level doping (0.2 M) of Cr into CdSe enhances the photocurrent density and responsivity by ~ 3 times in comparison to pure CdSe thin film. Our results confirmed that Cr is the attractive dopant to modify the photoelectrochemical activity of the CdSe thin film.

中文翻译：

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通过铬取代掺杂提高 CdSe 薄膜的电化学活性

摘要 取代掺杂是修饰光电化学系统光阳极的主要方法，通过它可以控制其对太阳光谱的响应。在这里，我们将过渡金属 Cr 引入 CdSe 主晶格以研究光电化学 (PEC) 性能。Cr掺杂的CdSe薄膜通过周期性循环伏安法沉积。XRD 和拉曼光谱证实所有生长薄膜的立方相与 Cr3+ 的良好替代位于 CdSe 主晶格中的 Cd2+ 晶格位。通过SEM和EDAX研究表面形态和组成构象。透射电子显微镜显示所有沉积样品具有良好的多晶性质。由于薄膜比表面积的增加，CdSe 主晶格中的 Cr 取代增强了可见光吸收。使用三电极系统研究了光电化学 (PEC) 性能，结果表明，与纯 CdSe 薄膜相比，Cr 最佳水平掺杂 (0.2 M) 到 CdSe 中可将光电流密度和响应率提高约 3 倍。我们的结果证实，Cr 是一种有吸引力的掺杂剂，可以改变 CdSe 薄膜的光电化学活性。