Abstract High entropy alloys represent a new type of materials with a unique combination of physical properties originating from the occurrence of single-phase solid solutions of numerous elements. The preparation of nanostructured or amorphous structure in a form of thin films promises increased effective surface and high intergranular diffusion of elements as well as a high affinity to oxidation. In this work, we studied HfNbTaTiZr thin films, deposited at room temperature by DC magnetron sputtering from a single bcc phase target. Films exhibit cellular structure (∼100 nm) with fine substructure (∼10 nm) made of round-shape amorphous clusters. The composition is close to equimolar with slight Ti enrichment and without any mutual segregation of elements. Oxidation at the ambient atmosphere leads to the formation of Ti, Zr, Nb, Hf, and Ta oxide clusters in the film up to the depth of 200–350 nm out of the total film thickness of 1650 nm. Oxygen absorption takes place preferentially in the large vacancy clusters located in between the amorphous cluster aggregates. The dominant type of defect are small open volumes with a size comparable with vacancy. The distribution of these defects is uniform with depth and is not influenced by the presence of oxygen in the film.

中文翻译：

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直流磁控溅射制备非晶HfNbTaTiZr高熵合金薄膜的氧化

摘要 高熵合金是一种新型材料，具有多种元素单相固溶体形成的独特物理性能组合。以薄膜形式制备纳米结构或无定形结构有望增加有效表面和元素的高晶间扩散以及对氧化的高亲和力。在这项工作中，我们研究了 HfNbTaTiZr 薄膜，在室温下通过直流磁控溅射从单个 bcc 相靶上沉积。薄膜表现出蜂窝状结构（~100 nm），具有由圆形非晶簇制成的精细亚结构（~10 nm）。成分接近等摩尔，有轻微的 Ti 富集，没有任何元素相互偏析。环境大气中的氧化导致形成 Ti、Zr、Nb、Hf、和 Ta 氧化物簇在薄膜中的深度达到 1650 nm 的总薄膜厚度中的 200-350 nm。氧吸收优先发生在位于无定形簇聚集体之间的大空位簇中。主要的缺陷类型是与空位大小相当的小开放体积。这些缺陷的分布随深度均匀，不受薄膜中氧的影响。