This paper reports that frequency response on profile of C–V–ƒ and G/ω–V–ƒ characteristics of spin-coated nanographite (NG)-doped polyvinylpyrrolidone (PVP)/n-Si structures in a wide frequency (1 kHz–5 MHz) and voltage (± 3 V) ranges at room temperature. Hereby, the basic parameters of the structure such as diffusion potential (V_D), doping donor density (N_D), Fermi energy level (E_F), maximum electric field (E_m), depletion layer thickness (W_d), and barrier height (Φ_B) are derived by using the intercept and slope of C⁻²–V–ƒ plot for each frequency. Additionally, the energy density distribution of surface states (N_ss) and their relaxation time values (τ) are also attained from the conduction method and their values are found as 4.999 × 10¹² eV⁻¹ cm⁻² and 2.92 µs at 0.452 eV, and 3.857 × 10¹² eV⁻¹ cm⁻² and 164 µs at 0.625 eV, respectively. The lower N_ss values are the consequence of passivation effect of the used nanographite (NG)-PVP polymer interlayer. As a result, the polymer interlayer based nanographite (NG)-PVP is candidate instead of the widely used oxide/insulator layer for the purpose of decreasing the surface states or dislocations.

本文报道了在很宽的频率范围内（1 kHz–m），旋涂纳米石墨（NG）掺杂的聚乙烯吡咯烷酮（PVP）/ n-Si结构的C–V–ƒ和G / ω–V–ƒ特性曲线的频率响应。在室温下为5 MHz）和电压（±3 V）范围。因此，该结构的基本参数，例如扩散电势（V _D），掺杂施主密度（N _D），费米能级（E _F），最大电场（E _m），耗尽层厚度（W _d）和势垒高度（Φ_乙）通过使用C的截距和斜率导出^-2每个频率的–V–ƒ图。另外，还可以通过传导方法获得表面态的能量密度分布（N _ss）及其弛豫时间值（τ），在0.452 eV时，其值为4.999×10 ¹²  eV ^-1  cm ^-2和2.92 µs。在0.625 eV时分别为3.857×10 ¹²  eV ^-1  cm ^-2和164 µs。较低的N _ss值是所用纳米石墨（NG）-PVP聚合物中间层钝化效果的结果。结果，出于减少表面状态或位错的目的，基于聚合物中间层的纳米石墨（NG）-PVP代替了广泛使用的氧化物/绝缘体层是候选者。