Cubic bismuth zinc niobate (c-BZN) thick films were fabricated on flexible platinum foils by electrophoretic deposition technique. The X-ray diffraction studies reveal that the films are under tensile stress. The permittivity of the c-BZN thick film sintered at 850 and 950°C, measured at an applied frequency of 1 MHz were 114 and 125, respectively. The corresponding values of dissipation factors were 0.004 and 0.0038. The films were also exhibiting voltage-dependent dielectric properties. The biaxial tensile stress, which is developed as a result of substrate constraints during the sintering, leads to significant change in the relaxation and dielectric characteristics of the films compared to that of ceramics. From this study, it is expected that large tensile stress in c-BZN thick films can bring down the dielectric loss and the variation of the dielectric permittivity with temperature, which will make them attractive, low loss and temperature stable applications.

中文翻译：

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柔性电子器件金属箔上 Bi1.5Zn1.0Nb1.5O7 厚膜的电泳沉积

通过电泳沉积技术在柔性铂箔上制备立方铌酸锌铋 (c-BZN) 厚膜。X 射线衍射研究表明薄膜处于拉伸应力下。在 850 和 950°C 下烧结的 c-BZN 厚膜的介电常数在 1 MHz 的应用频率下测量分别为 114 和 125。相应的耗散因子值为 0.004 和 0.0038。这些薄膜还表现出与电压有关的介电特性。与陶瓷相比，由于在烧结过程中基材约束而产生的双轴拉伸应力导致薄膜的松弛和介电特性发生显着变化。从这项研究中，