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Comparison of Growth Structures for Continuous-Wave Electrically Pumped 155 µm Quantum Dash Lasers Grown on (001) Si
Photonics Research ( IF 7.6 ) Pub Date : 2020-11-20 , DOI: 10.1364/prj.403938
Wei Luo , Ying Xue , Jie Huang , Liying Lin , Bei Shi , Kei May Lau

Semiconductor lasers directly grown on silicon offer great potential as critical components in high-volume, low-cost integrated silicon photonics circuits. Although InAs/InP quantum dash (QDash) lasers on native InP substrate emitting at 1.5 μm (C-band) have demonstrated notable performance, the growth of InAs/InP QDash lasers on silicon remains undeveloped because of the 8% lattice mismatch between InP and silicon. Here we report advances of growth techniques leading to the first C-band room-temperature continuous-wave electrically pumped QDash lasers on CMOS standard (001) silicon substrates by metalorganic chemical vapor deposition. A correlation between various material characterizations and device performance is analyzed for different QDash laser structures grown on planar nominal (001) silicon. With the optimized QDash growth and improved fabrication process, the lowest threshold current density of 1.5 kA/cm2 was determined on an 8 μm×1.5 mm device on planar silicon with a single facet output power exceeding 14 mW. The device results illustrate the good material quality of the QDash lasers grown on silicon, suggesting potential applications for other active components of photonic integrated circuits, such as semiconductor optical amplifiers, modulators, and photodetectors.

中文翻译:

在 (001) Si 上生长的连续波电泵浦 155 µm 量子短划线激光器的生长结构比较

直接在硅上生长的半导体激光器作为大容量、低成本集成硅光子电路中的关键组件具有巨大潜力。尽管 InAs/InP 量子破折号 (QDash) 激光器在 1.5 μm(C 波段)发射的原生 InP 衬底上表现出显着的性能,但 InAs/InP QDash 激光器在硅上的生长仍未得到发展,因为 InP 和硅。在这里,我们报告了通过金属有机化学气相沉积在 CMOS 标准 (001) 硅衬底上产生第一个 C 波段室温连续波电泵浦 QDash 激光器的生长技术的进步。针对在平面标称 (001) 硅上生长的不同 QDash 激光器结构,分析了各种材料特性与器件性能之间的相关性。通过优化的 QDash 生长和改进的制造工艺,在平面硅上的 8 μm×1.5 mm 器件上确定了 1.5 kA/cm2 的最低阈值电流密度,单面输出功率超过 14 mW。器件结果说明了在硅上生长的 QDash 激光器的良好材料质量,表明光子集成电路的其他有源组件的潜在应用,如半导体光放大器、调制器和光电探测器。
更新日期:2020-11-20
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