One-inch free-standing (001) diamond layers on a (11 2 ¯0) (a-plane) sapphire substrate with an Ir buffer layer (Kenzan Diamond®) were grown. The full-width at half maximum values of (004) and (311) x-ray rocking curves were 113.4 and 234.0 arc sec, respectively. The dislocation density of the substrates was 1.4 × 107 cm−2, determined by plan-view transmission electron microscopy observation. These values are much lower than the reported values among heteroepitaxial diamonds. Furthermore, x-ray pole figure measurements showed four symmetry of the crystal, showing single crystallinity without any twinning. The curvature radius of diamond was measured to be 90.6 cm, which is much larger than previous values, ca. 20 cm. Surprisingly, a cubic-lattice (001) diamond crystal was epitaxially grown on a trigonal-lattice (11 2 ¯0) sapphire substrate. However, we found that the epitaxial relation is diamond (001) [110]//Ir (001) [110]//sapphire (11 2 ¯0) [0001]. Now, high-quality one-inch diamond wafers will be available as a substrate used for diamond electronic devices.

中文翻译：

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在 (11 2 ¯0) 蓝宝石衬底上生长高质量的一英寸自支撑异质外延 (001) 金刚石

在具有 Ir 缓冲层 (Kenzan Diamond®) 的 (11 2 ¯0)（a 面）蓝宝石衬底上生长一英寸自支撑 (001) 金刚石层。(004) 和 (311) X 射线摇摆曲线的半高全宽分别为 113.4 和 234.0 弧秒。衬底的位错密度为 1.4 × 107 cm-2，由平面图透射电子显微镜观察确定。这些值远低于异质外延金刚石中报告的值。此外，X 射线极图测量显示晶体具有四个对称性，显示出单晶，没有任何孪晶。钻石的曲率半径测量为 90.6 厘米，这比以前的值大得多，约。20 厘米。令人惊讶的是，立方晶格 (001) 金刚石晶体外延生长在三角晶格 (11 2 ¯0) 蓝宝石衬底上。然而，我们发现外延关系是金刚石（001）[110]//Ir（001）[110]//蓝宝石（11 2 ¯0）[0001]。现在，高质量的一英寸金刚石晶片将可用作金刚石电子设备的基板。