Although many studies have been continuously conducted to reduce the power consumption of a resistive random access memory (RRAM) cross-point array with the current-compliance effect, it has been difficult yet to realize intrinsic self-compliance effects in an RRAM device itself. In this study, a simple oxygen-rich TiOy layer is inserted into the Al2O3/TiOx-based RRAM stack as a current suppression layer, and XPS analysis is provided to compare the stoichiometry of the TiOx and TiOy layers. A self-compliance region is formed between the different breakdown voltages of Al2O3 and TiOy layers, and a relatively thinner current path is formed in the Al2O3 layer than a device without the TiOy layer and the overall current level is significantly decreased since the TiOy layer limits the overshoot current.

中文翻译：

---

富氧TiOy插入Al2O3/TiOx基RRAM的电流抑制自顺应特性

尽管已经进行了许多研究以降低具有电流顺应效应的电阻式随机存取存储器 (RRAM) 交叉点阵列的功耗，但仍然很难在 RRAM 器件本身中实现固有的自顺应效应。在这项研究中，一个简单的富氧 TiOy 层被插入到基于 Al2O3/TiOx 的 RRAM 堆栈中作为电流抑制层，并提供 XPS 分析来比较 TiOx 和 TiOy 层的化学计量。在 Al2O3 和 TiOy 层的不同击穿电压之间形成自顺应区，在 Al2O3 层中形成的电流路径比没有 TiOy 层的器件更薄，并且由于 TiOy 层的限制，整体电流水平显着降低过冲电流。