In this work, we study the effects of mobile oxygen ions in a synthetic antiferromagnet structure gated by a sputtered SiO2 dielectric layer for memory and logic applications. Our devices utilize electrochemical reactions between dielectric reactive species and magnetic elements to create irreversible changes in magnetization. We analyzed the dependence of ion velocity on the gate dielectric properties such as the lattice parameter, oxygen migration energy barrier, and electric field (E-field). Hall bar devices were patterned and tested to determine the interlayer exchange coupling between the CoFeB and [Co/Pd]n layers. The anomalous Hall effect (AHE) of the CoFeB layer at different gate voltages (Vg) was measured to determine the Vg dependence. A sharp change in the behavior of the CoFeB layer with respect to negative Vg results in a non-reciprocal decrease in the coercivity and magnetization and an increase in exchange bias. The observed change in exchange bias field and magnetization allows us to measure the change in the effective thickness of the CoFeB layer. This led us to conclude that the source of such behavior is the negatively charged mobile oxygen ions from the SiO2 gate.

中文翻译：

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移动氧离子对顶门控合成反铁磁体结构的影响

在这项工作中，我们研究了移动氧离子在用于存储器和逻辑应用的由溅射 SiO2 介电层门控的合成反铁磁体结构中的影响。我们的设备利用介电反应物质和磁性元素之间的电化学反应来产生不可逆的磁化变化。我们分析了离子速度对栅极介电特性的依赖性，例如晶格参数、氧迁移能垒和电场（E 场）。霍尔棒器件经过图案化和测试，以确定 CoFeB 和 [Co/Pd]n 层之间的层间交换耦合。测量 CoFeB 层在不同栅极电压 (Vg) 下的异常霍尔效应 (AHE) 以确定 Vg 依赖性。CoFeB 层的行为相对于负 Vg 的急剧变化导致矫顽力和磁化的非互易性降低以及交换偏置的增加。观察到的交换偏置场和磁化强度的变化使我们能够测量 CoFeB 层有效厚度的变化。这使我们得出结论，这种行为的根源是来自 SiO2 门的带负电的移动氧离子。