We have investigated how the beam geometry affects the thermal responsivity of doubly clamped GaAs microelectromechanical systems (MEMS) beam resonator structures. When the MEMS beam is heated, a thermal strain is generated and shifts the resonance frequency. MEMS beams with larger l/h ratios (l and h are the length and the thickness of the MEMS beam, respectively) have lower thermal conductances and are supposed to exhibit higher thermal responsivities. However, the induced thermal strain tends to be released by beam deflection for long GaAs beams, and as a result, long beams do not necessarily lead to high thermal responsivities. To reduce the beam deflection, we have introduced a preloaded tensile strain in the MEMS beam by using the lattice mismatch between GaAs1−xPx (x = 0.01) and GaAs. We find that the deflection of the GaAs1−xPx MEMS beam is suppressed and the responsivities increase with the increasing beam length, demonstrating that the introduction of tensile strain is useful for achieving high thermal responsivities predicted for long MEMS beams.

中文翻译：

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光束偏转对 GaAs 基双钳位微机电光束谐振器热响应率的影响

我们研究了梁几何形状如何影响双钳位 GaAs 微机电系统 (MEMS) 梁谐振器结构的热响应性。当 MEMS 梁被加热时，会产生热应变并改变谐振频率。具有较大 l/h 比率的 MEMS 梁（l 和 h 分别是 MEMS 梁的长度和厚度）具有较低的热导率，并且应该表现出较高的热响应性。然而，对于长 GaAs 光束，诱导热应变往往会通过光束偏转释放，因此，长光束不一定会导致高热响应性。为了减少梁偏转，我们通过使用 GaAs1−xPx (x = 0.01) 和 GaAs 之间的晶格失配，在 MEMS 梁中引入了预加载拉伸应变。