Abstract The execution of two-dimensional (2D) layered material in the source-region of a silicon-based tunnel field-effect transistors (TFETs) is proposed for ultra-low-power (ULP) applications. In the present simulation-based study, the layered black phosphorus (B-Ph) with moderate value of bandgap and low effective mass is used in the source-region of the SOI (silicon-on-insulator) heterojunction dopingless TFET (HD-TFET). The investigations of device characteristics are done against the channel lengths ranging from 45 nm to 14 nm. The device offers promising subthreshold characteristics for ULP applications with extremely low subthreshold swing of 1.77 mV/Decade, and I o n I o f f ratio of ≈ 10 9 . The analog and radio-frequency (RF) performances of the B-Ph/Si HD-TFET are observed promising for the possible implementation at circuit level. Moreover, the proposed device offers a high degree of linearity with the maximum compression point of − 20 dB . The numerical simulation of the proposed device is performed on ATLAS™, a two-dimensional (2D) device simulator from Silvaco.

中文翻译：

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具有增强电气特性的超低功耗黑磷 (B-Ph)/Si 异质结无掺杂隧道 FET (HD-TFET)

摘要 针对超低功耗 (ULP) 应用，建议在硅基隧道场效应晶体管 (TFET) 的源极区使用二维 (2D) 层状材料。在目前基于模拟的研究中，在 SOI（绝缘体上硅）异质结无掺杂 TFET (HD-TFET) 的源区中使用了带隙适中值和低有效质量的层状黑磷 (B-Ph) ）。器件特性的研究是针对 45 nm 到 14 nm 的沟道长度进行的。该器件为 ULP 应用提供了有希望的亚阈值特性，具有 1.77 mV/Decade 的极低亚阈值摆幅和 ≈ 10 9 的 I on I off 比。观察到 B-Ph/Si HD-TFET 的模拟和射频 (RF) 性能有望在电路级实现。此外，所提出的设备提供了高度的线性度，最大压缩点为 - 20 dB。所提出设备的数值模拟在 ATLAS™ 上进行，ATLAS™ 是 Silvaco 的二维 (2D) 设备模拟器。