Rutherford Backscattering Spectrometry (RBS) is a powerful ion beam analysis technique in frequent use within materials science. The recent emergence of targets incorporating complex features such as ultra-scaled diffusion barriers and isotopically-enriched films has started to push the limits of the technique, necessitating the expanded use of systems with a higher energy resolution. The increased cost and complexity of these systems based on already well-established schemes may present a barrier to their more widespread adoption. Here, we present an RBS detection system specifically designed for simple integration into existing nuclear probe infrastructure, but with a considerably higher energy resolution than a standard passivated planar detector. We employ a modified silicon p–i–n photodiode integrated within an optimised in-vacuum preamplifier to achieve a relative energy resolution of 3 $\times$ 10${}^{\text{−3}}$ with 2.2 MeV He${}^{+}$ ions. In a glancing angle geometry, this corresponds to a depth resolution of $\sim$1.5 nm and a mass resolution of $<$1 u from light elements up to Cu. We demonstrate the use of this detector to measure the thermal diffusion of near-surface As implants in a Si substrate, important for the formation of ultra-shallow junctions; and the residual ²⁹Si concentration in an isotopically enriched ²⁸Si specimen, a promising platform for quantum computation.

卢瑟福背散射光谱（RBS）是一种功能强大的离子束分析技术，在材料科学领域经常使用。最近出现的具有复杂特征的靶标，例如超尺度的扩散势垒和同位素富集的薄膜，已经开始推动该技术的局限性，因此有必要扩大使用具有更高能量分辨率的系统。这些基于已经建立的方案的系统的成本增加和复杂性可能会阻碍其被更广泛地采用。在这里，我们介绍一种RBS检测系统，该系统专门设计用于简单地集成到现有的核探针基础设施中，但具有比标准钝化平面检测器高得多的能量分辨率。$\times$ 10${}^{\text{−3}}$ 与2.2 MeV He${}^{+}$离子。在掠射角几何中，这对应于深度分辨率为$〜$1.5 nm，质量分辨率为 $<$1 u从轻元素到Cu。我们演示了使用该检测器来测量Si衬底中近表面As注入的热扩散，这对于形成超浅结非常重要。同位素富集的²⁸ Si标本中残留的²⁹ Si浓度，这是量子计算的一个有希望的平台。