Atomic thickness two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted intensive attention due to the potential application for next generation nano-electronic devices. The thermal properties of materials play a vital role in performance of nano-electronic devices. Here, few-layered MoS₂/reduced graphene oxide (RGO) heterostructure with intimate two-dimensional heterointerfaces was successfully synthesized via hydrothermal method. We report for the first time the temperature-dependence Raman vibration of few-layered MoS₂/RGO hybrid. The temperature coefficient of A_1g modes in few-layered MoS₂ solely and MoS₂/RGO hybrid are −0.0141 and −0.0154 cm⁻¹/K, respectively. The Raman vibration of E¹_2g and A_1g modes with laser powder increasing in the two samples were also measured. The qualitative analysis and comparison of the two samples suggested that the few-layer MoS₂ in MoS₂/RGO hybrid possesses higher thermal conductivity than few-layer MoS₂ solely.

由于下一代纳米电子器件的潜在应用，原子厚度二维（2D）过渡金属二硫化二氢（TMD）引起了广泛的关注。材料的热性能在纳米电子器件的性能中起着至关重要的作用。在此，通过水热法成功地合成了具有紧密二维异质界面的少层MoS ₂ /还原氧化石墨烯（RGO）异质结构。我们首次报道了几层MoS ₂ / RGO杂化体的温度依赖性拉曼振动。单层MoS ₂和MoS ₂ / RGO杂化层中A _1g模式的温度系数分别为-0.0141和-0.0154 cm ^-1/ K。还测量了两个样品中E ¹ _2g和A _1g模式随激光粉末增加的拉曼振动。两个样品的定性分析和比较建议少层的MoS ₂中的MoS ₂ / RGO混合比具有少层的MoS更高的导热率₂只。